Characterisation and simulation of nanometer scale devices
Session Chair: Eddy Simoen (imec, Belgium)
› Cryogenic Behavior of 22 nm FDSOI Technology for Quantum Computing - Hung-Chi Han, Ecole Polytechnique Fédérale de Lausanne
09:00-09:20 (20min)
› Si thickness influence on subthreshold currents at high temperatures in FDSOI CMOS - Per-Erik Hellström, KTH Royal Institute of Technology
09:20-09:40 (20min)
› Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology - Dylan Issartel, Univ Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, Ecole Centrale de Lyon, INL
09:40-10:00 (20min)
› Combined effects of BTI, HCI and OFF-State MOSFETs Aging on the CMOS Inverter Performance - Albert Crespo-Yepes, Universitat Autònoma de Barcelona
10:00-10:20 (20min)
› Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures - Yi Han, Faculty of Mathematics, Computer Science and Natural Sciences, RWTH Aachen University, Peter Grünberg Institute (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich GmbH
11:20-11:40 (20min)
› Dopant activation and recrystallisation process in nanosecond UV-laser annealed phosphorus doped ultra-thin SOI - Fuccio CRISTIANO, Laboratoire d'analyse et d'architecture des systèmes
11:40-12:00 (20min)
› Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology - Ian O'Connor, Institut des nanotechnologies de Lyon - Site d'Ecully - Chhandak Mukherjee, Laboratoire de líntégration, du matériau au système
14:40-15:00 (20min)
› Operational Transconductance Amplifier Design with Gate-All-Around Nanosheet MOSFET using Experimental Lookup Table Approach - Julia Sousa, University of São Paulo
15:00-15:20 (20min)
› Modeling the propagation of ac signal on the channel of pseudo-MOS method - Shingo Sato, Kansai University
15:40-15:50 (10min)
› The effects of surface passivation on the electrostatics of the UTB SOI devices - Ravi Solanki, Indian Institute of Science, Education and Research
15:50-16:00 (10min)
› Effect of Temperature on Performance of HZO-Based FD-SOI NCFET - K P Pradhan, Indian Institute of Information Technology, Design and Manufacturing [Kancheepuram]
16:00-16:10 (10min)
› TCAD based Modeling of Sub-surface Leakage in Short Channel Bulk MOSFETs - Harshit Kansal, Indian Institute of Science Education and Research Bhopal
16:10-16:20 (10min)
› RF performances at cryogenic temperature of inductances integrated in FDSOI technology - Quentin Berlingard, Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI)
16:20-16:30 (10min)
› Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory - Tobias Reiter, Institute for Microelectronics, Vienna University of Technology
16:30-16:40 (10min)
› Silicon and hafnia thin film transfer on c-plane sapphire: Effect of substrate thickness on the hafnia ferroelectric properties - Vladimir Popov, A.V. Rzhanov Institute of Semiconductor Physics
16:40-16:50 (10min)
› Investigation of the Invariant Drain Current Point in Dielectric Modulated BESOI MOSFET Biosensor - Leonardo Yojo, University of São Paulo
16:50-17:00 (10min)
› The Semiconductor Model Solved by the Numerov Process Over a Non-Uniform Grid - Massimo Rudan, Alma Mater Studiorum Università di Bologna [Bologna]
17:00-17:10 (10min)
› Conductance modulation in Al/SiO2/n-Si MIS resistive switching structures - Piotr Wiśniewski, Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, Center for Terahertz Research and Applications (CENTERA), Institute of High-Pressure Physics, Polish Academy of Sciences
17:10-17:20 (10min)
› Incorporation of silicon-carbide (SiC) nanocrystals in the MIM structures based on pulsed-DC reactively sputtered HfOx layers - Robert Mroczyński, Warsaw University of Technology [Warsaw]
17:20-17:40 (20min)
› TCAD Negative Capacitance Ferroelectric Devices Modeling for Radiation Detection Applications - Arianna Morozzi, Istituto Nazionale di Fisica Nucleare, Sezione di Perugia
17:40-17:50 (10min)
› Junctionless Nanowire Transistors Based Wilson Current Mirror - André Shibutani, Centro Universitário FEI
17:50-18:00 (10min)
› Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology with light-trapping concept - Shaochen Gao, Univ Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, Ecole Centrale de Lyon, INL
18:00-18:10 (10min)
› Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase - Viktor Sverdlov, CDL NovoMemLog, Institute for Microelectronics, TU Wien
18:10-18:20 (10min)
› Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si - Luiz Felipe Aguinsky, Christian Doppler Laboratory for High Performance TCAD, Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, 1040 Wien, Austria
18:20-18:30 (10min)
› Use of CMOS Image Sensor for early detection of ischemic and hemorrhagic stroke - Fabrizio Palma, Rome University La Sapienza, Università di Roma La Sapienza, DIET
18:40-18:50 (10min)
› Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors -
18:50-19:00 (10min)
Beyond and More than Moore devices characterisation/simulation and applications (I)
Session Chair: Pierpaolo Palestri (University of Udine, Italy)
› Modeling Low and High Field Uniform Transport in Monolayer MoS2 - alessandro pilotto, DPIA University of Udine
09:00-09:20 (20min)
› Synaptic transistors based on transparent oxide for neural image recognition - Q N Wang, AI University Research Centre (AI-URC), Xi'an Jiaotong-Liverpool University, Department of Electrical Engineering and Electronics, University of Liverpool, School of Advanced Technology, Xi'an Jiaotong-Liverpool University
09:40-10:00 (20min)
› Thermal Stability of Ferroelectricity in Hafnia-Zirconia-Alumina Buried Oxide Stacks - Vladimir Popov, A.V. Rzhanov Institute of Semiconductor Physics
10:00-10:20 (20min)
Beyond and More than Moore devices characterisation/simulation and applications (II)
Session Chair: Alexander Zaslavsky (Brown University, USA)
› Improved inter-device variability in graphene liquid gate sensors by laser treatment - Jorge Avila, Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071, Granada, Spain - Jose Galdon, Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071, Granada, Spain - Francisco Gamiz, Nanoelectronics Research Group (CITIC-UGR), Department of Electronics, University of Granada, 18071, Granada, Spain
14:40-15:00 (20min)
› Numerical Device Modeling of High-Aspect Ratio FinFET based pH-Nanosensor - Rakshita Dhar, University of Glasgow
15:00-15:20 (20min)
› A theoretical study of electron mobility distribution in FDSOI MOSFET - Nima Dehdashti Akhavan, The University of Western Australia
15:40-16:00 (20min)
› Performance of Stacked SOI Nanowires in a Wide Temperature Range - Jaime Rodrigues, Centro Universitário FEI - Sylvain Barraud, Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI)
16:00-16:20 (20min)
› Characterization and Lambert-W Function based modeling of FDSOI five-gate qubit MOS devices down to cryogenic temperatures - Edoardo Catapano, Commissariat à l\'énergie atomique et aux énergies alternatives - Laboratoire dÉlectronique et de Technologie de lÍnformation, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation
16:20-16:40 (20min)
› High Temperature Influence on the Trade-off between gm/ID and fT of nanosheet NMOS Transistors with Different Metal Gate Stack - Vanessa Silva, University of São Paulo
16:40-17:00 (20min)
› Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures - Francesco Serra di Santa Maria, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d\'Hyperfréquences et Caractérisation
17:00-17:20 (20min)
› Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets - Bogdan Cretu, Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen
09:00-09:20 (20min)
› Random Telegraph Noise real time testing based on downsampling for mass data extraction - Maximilian Juettner, HTW Dresden
09:20-09:40 (20min)
› In-situ recovery of on-membrane PD-SOI MOSFET from TID defects after radiation - Sedki Amor, Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Physics Department, Faculty of Sciences of Monastir, Electronics and Micro-Electronics Laboratory, Monastir. TUNISIA.
09:40-10:00 (20min)
› On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact - Eddy Simoen, IMEC
10:00-10:20 (20min)
› Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations - Christoph Lenz, Christian Doppler Laboratory for High Performance TCAD at the Institute for Microelectronics, TU Wien
10:40-11:00 (20min)
› On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon -
11:00-11:20 (20min)
› First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons - Viktor Sverdlov, CDL NovoMemLog, Institute for Microelectronics, TU Wien
11:20-11:40 (20min)
› Impact of different types of planar defects on current transport in Indium Phosphide (InP) - Christian Vedel, Device Modeling Group, School of Engineering, University og Glasgow, Glasgow G12 8QQ, Synopsys Denmark ApS, 2100 Copenhagen
11:40-12:00 (20min)
› Field-Effect Passivation of Lossy Interfaces in High-Resistivity RF Silicon Substrates - Martin Rack, Université Catholique de Louvain
14:40-15:00 (20min)
› Charge Pumping-Based Method for Traps Density Extraction in Junctionless Transistors - Ewerton Fonte, Centro Universitário FEI - Rodrigo Doria, Centro Universitário FEI - Renan Doria, Universidade Federal do ABC
15:00-15:20 (20min)
Beyond and More than Moore devices characterisation/simulation and applications (III)
Session Chair: Cor Claeys (K.U. Leuven, Belgium)
› Device simulations of ion-sensitive FETs with arbitrary surface chemical reactions - Leandro Julian Mele, DPIA University of Udine
15:40-16:00 (20min)
› An artificial synaptic thin-film transistor based on 2D MXene–TiO2 - Yixin Cao, School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiaotong-Liverpool University
16:00-16:20 (20min)
› Investigation of proton irradiation effects on AlGaN/GaN HEMTs with different buffer layer - eunjin kim, Kyungpook National University [Daegu]
16:20-16:40 (20min)
› Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications - JORIS LACORD, CEA-LETI
16:40-17:00 (20min)
› Temperature Increase in MRAM at Writing: A Finite Element Approach - Tomáš Hadámek, Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien - Viktor Sverdlov, Institute for Microelectronics, TU Wien
17:00-17:20 (20min)
Loading... 
