2021 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)

›8:30 (20min)

Welcome desk

8:30 - 8:50 (20min)

Welcome desk

›8:50 (10min)

Welcome Address

8:50 - 9:00 (10min)

Welcome Address

›9:00 (1h20)

Characterisation and simulation of nanometer scale devices
Session Chair: Eddy Simoen (imec, Belgium)

9:00 - 10:20 (1h20)

Characterisation and simulation of nanometer scale devices

Session Chair: Eddy Simoen (imec, Belgium)

› Cryogenic Behavior of 22 nm FDSOI Technology for Quantum Computing - Hung-Chi Han, Ecole Polytechnique Fédérale de Lausanne 09:00-09:20 (20min)

› Si thickness influence on subthreshold currents at high temperatures in FDSOI CMOS - Per-Erik Hellström, KTH Royal Institute of Technology 09:20-09:40 (20min)

› Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology - Dylan Issartel, Univ Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, Ecole Centrale de Lyon, INL 09:40-10:00 (20min)

› Combined effects of BTI, HCI and OFF-State MOSFETs Aging on the CMOS Inverter Performance - Albert Crespo-Yepes, Universitat Autònoma de Barcelona 10:00-10:20 (20min)

›10:20 (20min)

Coffee break

10:20 - 10:40 (20min)

Coffee break

›10:40 (40min)

The concept of electrostatic doping and related devices
Sorin Cristoloveanu

10:40 - 11:20 (40min)

The concept of electrostatic doping and related devices

Sorin Cristoloveanu

›11:20 (40min)

Advanced and Innovative SOI Architectures (I)
Session Chair: Eddy Simoen (imec, Belgium)

11:20 - 12:00 (40min)

Advanced and Innovative SOI Architectures (I)

Session Chair: Eddy Simoen (imec, Belgium)

› Impact of the Backgate on the Performance of SOI UTBB nMOSFETs at Cryogenic Temperatures - Yi Han, Faculty of Mathematics, Computer Science and Natural Sciences, RWTH Aachen University, Peter Grünberg Institute (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich GmbH 11:20-11:40 (20min)

› Dopant activation and recrystallisation process in nanosecond UV-laser annealed phosphorus doped ultra-thin SOI - Fuccio CRISTIANO, Laboratoire d'analyse et d'architecture des systèmes 11:40-12:00 (20min)

›12:00 (2h)

Lunch Break

12:00 - 14:00 (2h)

Lunch Break

›14:00 (40min)

Charge-based models and Field Effect Transistors: make it easy
Jean-Michel Sallèse

14:00 - 14:40 (40min)

Charge-based models and Field Effect Transistors: make it easy

Jean-Michel Sallèse

›14:40 (40min)

Simulation and Modelling (I)
Session Chair: Jean-Michel Sallèse (EPFL, Switzerland)

14:40 - 15:20 (40min)

Simulation and Modelling (I)

Session Chair: Jean-Michel Sallèse (EPFL, Switzerland)

› Analysis of Energy-Delay-Product of a 3D Vertical Nanowire FET Technology - Ian O'Connor, Institut des nanotechnologies de Lyon - Site d'Ecully - Chhandak Mukherjee, Laboratoire de líntégration, du matériau au système 14:40-15:00 (20min)

› Operational Transconductance Amplifier Design with Gate-All-Around Nanosheet MOSFET using Experimental Lookup Table Approach - Julia Sousa, University of São Paulo 15:00-15:20 (20min)

›15:20 (20min)

Coffee break

15:20 - 15:40 (20min)

Coffee break

›15:40 (3h20)

Poster
Session Co-Chairs: Viktor Sverdlov (TU Wien, Austria), Bogdan Cretu (ENSICAEN, France)

15:40 - 19:00 (3h20)

Poster

Session Co-Chairs: Viktor Sverdlov (TU Wien, Austria), Bogdan Cretu (ENSICAEN, France)

› Modeling the propagation of ac signal on the channel of pseudo-MOS method - Shingo Sato, Kansai University 15:40-15:50 (10min)

› The effects of surface passivation on the electrostatics of the UTB SOI devices - Ravi Solanki, Indian Institute of Science, Education and Research 15:50-16:00 (10min)

› Effect of Temperature on Performance of HZO-Based FD-SOI NCFET - K P Pradhan, Indian Institute of Information Technology, Design and Manufacturing [Kancheepuram] 16:00-16:10 (10min)

› TCAD based Modeling of Sub-surface Leakage in Short Channel Bulk MOSFETs - Harshit Kansal, Indian Institute of Science Education and Research Bhopal 16:10-16:20 (10min)

› RF performances at cryogenic temperature of inductances integrated in FDSOI technology - Quentin Berlingard, Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI) 16:20-16:30 (10min)

› Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory - Tobias Reiter, Institute for Microelectronics, Vienna University of Technology 16:30-16:40 (10min)

› Silicon and hafnia thin film transfer on c-plane sapphire: Effect of substrate thickness on the hafnia ferroelectric properties - Vladimir Popov, A.V. Rzhanov Institute of Semiconductor Physics 16:40-16:50 (10min)

› Investigation of the Invariant Drain Current Point in Dielectric Modulated BESOI MOSFET Biosensor - Leonardo Yojo, University of São Paulo 16:50-17:00 (10min)

› The Semiconductor Model Solved by the Numerov Process Over a Non-Uniform Grid - Massimo Rudan, Alma Mater Studiorum Università di Bologna [Bologna] 17:00-17:10 (10min)

› Conductance modulation in Al/SiO2/n-Si MIS resistive switching structures - Piotr Wiśniewski, Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, Center for Terahertz Research and Applications (CENTERA), Institute of High-Pressure Physics, Polish Academy of Sciences 17:10-17:20 (10min)

› Incorporation of silicon-carbide (SiC) nanocrystals in the MIM structures based on pulsed-DC reactively sputtered HfOx layers - Robert Mroczyński, Warsaw University of Technology [Warsaw] 17:20-17:40 (20min)

› TCAD Negative Capacitance Ferroelectric Devices Modeling for Radiation Detection Applications - Arianna Morozzi, Istituto Nazionale di Fisica Nucleare, Sezione di Perugia 17:40-17:50 (10min)

› Junctionless Nanowire Transistors Based Wilson Current Mirror - André Shibutani, Centro Universitário FEI 17:50-18:00 (10min)

› Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology with light-trapping concept - Shaochen Gao, Univ Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, Ecole Centrale de Lyon, INL 18:00-18:10 (10min)

› Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase - Viktor Sverdlov, CDL NovoMemLog, Institute for Microelectronics, TU Wien 18:10-18:20 (10min)

› Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si - Luiz Felipe Aguinsky, Christian Doppler Laboratory for High Performance TCAD, Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, 1040 Wien, Austria 18:20-18:30 (10min)

› Use of CMOS Image Sensor for early detection of ischemic and hemorrhagic stroke - Fabrizio Palma, Rome University La Sapienza, Università di Roma La Sapienza, DIET 18:40-18:50 (10min)

› Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors - 18:50-19:00 (10min)

›19:15 (1h15)

Cocktail Town Hall of Caen

19:15 - 20:30 (1h15)

Cocktail Town Hall of Caen