2021 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)

›9:00 (1h20)

Noise characterisation
Session Chair: Sorin Cristoloveanu (IMEP-LAHC, France)

9:00 - 10:20 (1h20)

Noise characterisation

Session Chair: Sorin Cristoloveanu (IMEP-LAHC, France)

› Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets - Bogdan Cretu, Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen 09:00-09:20 (20min)

› Random Telegraph Noise real time testing based on downsampling for mass data extraction - Maximilian Juettner, HTW Dresden 09:20-09:40 (20min)

› In-situ recovery of on-membrane PD-SOI MOSFET from TID defects after  radiation - Sedki Amor, Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Physics Department, Faculty of Sciences of Monastir, Electronics and Micro-Electronics Laboratory, Monastir. TUNISIA. 09:40-10:00 (20min)

› On the Asymmetry of the DC and Low-Frequency Noise Characteristics of Vertical Nanowire pMOSFETs with Bulk Source Contact - Eddy Simoen, IMEC 10:00-10:20 (20min)

›10:20 (20min)

Coffee break

10:20 - 10:40 (20min)

Coffee break

›10:40 (1h20)

Simulation and Modelling (II)
Session Chair: Sorin Cristoloveanu (IMEP-LAHC, France)

10:40 - 12:00 (1h20)

Simulation and Modelling (II)

Session Chair: Sorin Cristoloveanu (IMEP-LAHC, France)

› Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations - Christoph Lenz, Christian Doppler Laboratory for High Performance TCAD at the Institute for Microelectronics, TU Wien 10:40-11:00 (20min)

› On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon - 11:00-11:20 (20min)

› First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons - Viktor Sverdlov, CDL NovoMemLog, Institute for Microelectronics, TU Wien 11:20-11:40 (20min)

› Impact of different types of planar defects on current transport in Indium Phosphide (InP) - Christian Vedel, Device Modeling Group, School of Engineering, University og Glasgow, Glasgow G12 8QQ, Synopsys Denmark ApS, 2100 Copenhagen 11:40-12:00 (20min)

›12:00 (2h)

Lunch Break

12:00 - 14:00 (2h)

Lunch Break

›14:00 (40min)

Unique features that make FDSOI CMOS ideal for RF, mm-wave and quantum computing applications
Sorin Voinigescu

14:00 - 14:40 (40min)

Unique features that make FDSOI CMOS ideal for RF, mm-wave and quantum computing applications

Sorin Voinigescu

›14:40 (40min)

Advanced and Innovative SOI Architectures (IV)
Session Chair: Cor Claeys (K.U. Leuven, Belgium)

14:40 - 15:20 (40min)

Advanced and Innovative SOI Architectures (IV)

Session Chair: Cor Claeys (K.U. Leuven, Belgium)

› Field-Effect Passivation of Lossy Interfaces in High-Resistivity RF Silicon Substrates - Martin Rack, Université Catholique de Louvain 14:40-15:00 (20min)

› Charge Pumping-Based Method for Traps Density Extraction in Junctionless Transistors - Ewerton Fonte, Centro Universitário FEI - Rodrigo Doria, Centro Universitário FEI - Renan Doria, Universidade Federal do ABC 15:00-15:20 (20min)

›15:20 (20min)

Coffee break

15:20 - 15:40 (20min)

Coffee break

›15:40 (40min)

Beyond and More than Moore devices characterisation/simulation and applications (III)
Session Chair: Cor Claeys (K.U. Leuven, Belgium)

15:40 - 16:20 (40min)

Beyond and More than Moore devices characterisation/simulation and applications (III)

Session Chair: Cor Claeys (K.U. Leuven, Belgium)

› Device simulations of ion-sensitive FETs with arbitrary surface chemical reactions - Leandro Julian Mele, DPIA University of Udine 15:40-16:00 (20min)

› An artificial synaptic thin-film transistor based on 2D MXene–TiO2 - Yixin Cao, School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Department of Electrical Engineering and Electronics, University of Liverpool, AI University Research Centre (AI-URC), Xi'an Jiaotong-Liverpool University 16:00-16:20 (20min)

›16:20 (1h)

III-V and memory oriented devices
Session Chair: Cor Claeys (K.U. Leuven, Belgium)

16:20 - 17:20 (1h)

III-V and memory oriented devices

Session Chair: Cor Claeys (K.U. Leuven, Belgium)

› Investigation of proton irradiation effects on AlGaN/GaN HEMTs with different buffer layer - eunjin kim, Kyungpook National University [Daegu] 16:20-16:40 (20min)

› Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications - JORIS LACORD, CEA-LETI 16:40-17:00 (20min)

› Temperature Increase in MRAM at Writing: A Finite Element Approach - Tomáš Hadámek, Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien - Viktor Sverdlov, Institute for Microelectronics, TU Wien 17:00-17:20 (20min)

›17:20 (05min)

Closing session

17:20 - 17:25 (05min)

Closing session